BLA6H1011-600,112 Details

BLA6H1011-600,112 Images

BLA6H1011-600,112

Part Number
BLA6H1011-600,112
Manufacturer
Ampleon USA Inc.
Description
RF FET LDMOS 100V 17DB SOT539A
Category
Discrete Semiconductor Products
Family
Transistors - FETs, MOSFETs - RF
Series
-
 
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BLA6H1011-600,112 Specifications

Part Number BLA6H1011-600,112
Part Status Active
Transistor Type LDMOS (Dual), Common Source
Frequency 1.03GHz ~ 1.09GHz
Gain 17dB
Voltage - Test 48V
Current Rating 72A
Noise Figure -
Current - Test 100mA
Power - Output 600W
Voltage - Rated 100V
Package / Case SOT539A
Supplier Device Package SOT539A
PDF Part Photo Part Number Manufacturers Description
Datasheet 2SK209-GR(TE85L,F) Toshiba Semiconductor and Storage JFET N-CH SOT23
Datasheet 2SK209-Y(TE85L,F) Toshiba Semiconductor and Storage JFET N-CH SOT23
Datasheet J211-D74Z ON Semiconductor JFET N-CH 25V 20MA TO92
Datasheet PN5033 Central Semiconductor Corp TRANSISTOR PNP TH
Datasheet MMBFJ310LT3G ON Semiconductor JFET N-CH 25V 60MA SOT23
Datasheet 2SK3557-6-TB-E ON Semiconductor JFET N-CH 15V 50MA SOT23
Datasheet MMBF5484 ON Semiconductor JFET N-CH 25V 5MA SOT23
Datasheet 3SK291(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH SMQ
Datasheet MMBF4416 ON Semiconductor JFET N-CH 30V 15MA SOT23
Datasheet BF994S,215 NXP USA Inc. MOSFET NCH DUAL GATE 20V SOT143B
This page contains 4 electronic component agents, they are : Toshiba Semiconductor and Storage ON Semiconductor Central Semiconductor Corp NXP USA Inc.

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