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    • DRDNB16W-7 Details

    DRDNB16W-7 Images

    DRDNB16W-7

    Part Number
    DRDNB16W-7
    Manufacturer
    Diodes Incorporated
    Description
    TRANS PREBIAS NPN/DIODE SOT363
    Category
    Discrete Semiconductor Products
    Family
    Transistors - Bipolar (BJT) - Single, Pre-Biased
    Series
    -
     
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    DRDNB16W-7 Specifications

    Part Number DRDNB16W-7
    Part Status Active
    Transistor Type NPN - Pre-Biased + Diode
    Current - Collector (Ic) (Max) 600mA
    Voltage - Collector Emitter Breakdown (Max) 50V
    Resistor - Base (R1) 1 kOhms
    Resistor - Emitter Base (R2) 10 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
    Current - Collector Cutoff (Max) 500nA
    Frequency - Transition 200MHz
    Power - Max 200mW
    Mounting Type Surface Mount
    Package / Case 6-TSSOP, SC-88, SOT-363
    Supplier Device Package SOT-363
    PDF Part Photo Part Number Manufacturers Description
    Datasheet DTA143XKAT146 Rohm Semiconductor TRANS PREBIAS PNP 200MW SMT3
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    Datasheet DTC114EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
    Datasheet DTC123JUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
    Datasheet DTC124EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
    Datasheet RN1306,LF Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
    Datasheet BCR183E6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 0.2W SOT23-3
    Datasheet BCR116E6327HTSA1 Infineon Technologies TRANS PREBIAS NPN 0.2W SOT23-3
    Datasheet RN2101,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
    Datasheet RN2101(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
    This page contains 3 electronic component agents, they are : Rohm Semiconductor Toshiba Semiconductor and Storage Infineon Technologies

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