| Part Number | IPB12CN10N G |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4320pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6 mOhm @ 67A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Part Photo | Part Number | Manufacturers | Description | |
|---|---|---|---|---|
| Datasheet |  |
BSH103,235 | Nexperia USA Inc. | MOSFET N-CH 30V 0.85A SOT23 |
| Datasheet |  |
DMP3098L-7 | Diodes Incorporated | MOSFET P-CH 30V 3.8A SOT23-3 |
| Datasheet |  |
DMN601TK-7 | Diodes Incorporated | MOSFET N-CH 60V 300MA SOT-523 |
| Datasheet |  |
NTJS3151PT1G | ON Semiconductor | MOSFET P-CH 12V 2.7A SOT-363 |
| Datasheet |  |
BSH203,215 | Nexperia USA Inc. | MOSFET P-CH 30V 470MA SOT23 |
| Datasheet |  |
DMG6968U-7 | Diodes Incorporated | MOSFET N-CH 20V 6.5A SOT-23 |
| Datasheet |  |
NTR4170NT1G | ON Semiconductor | MOSFET N-CH 30V 3.2A SOT23 |
| Datasheet |  |
NTR4171PT1G | ON Semiconductor | MOSFET P-CH 30V 2.2A SOT23 |
| Datasheet |  |
PMV30UN2R | Nexperia USA Inc. | MOSFET N-CH 20V SOT23 |
| Datasheet |  |
DMN3023L-7 | Diodes Incorporated | MOSFET N-CH 30V 6.2A SOT23 |
