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SI8901EDB-T2-E1 Details

SI8901EDB-T2-E1

Part Number: SI8901EDB-T2-E1

Manufacturer: Vishay Siliconix

Description: MOSFET 2P-CH 20V 3.5A 6-MFP

Category: Discrete Semiconductor Products

Family: Transistors - FETs, MOSFETs - Arrays

Series: TrenchFET®

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SI8901EDB-T2-E1 Specifications

Part Number	SI8901EDB-T2-E1
Part Status	Obsolete
FET Type	2 P-Channel (Dual) Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.5A
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-MICRO FOOT®CSP
Supplier Device Package	6-Micro Foot™

PDF	Part Number	Manufacturers	Description
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Datasheet	SI7949DP-T1-E3	Vishay Siliconix	MOSFET 2P-CH 60V 3.2A PPAK SO-8
Datasheet	SI7913DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 5A PPAK 1212-8
Datasheet	SI4943CDY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 8A 8-SOIC
Datasheet	STL65DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 65A POWERFLAT