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    • BCR116E6327HTSA1 Details

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    BCR116E6327HTSA1

    Part Number
    BCR116E6327HTSA1
    Manufacturer
    Infineon Technologies
    Description
    TRANS PREBIAS NPN 0.2W SOT23-3
    Category
    Discrete Semiconductor Products
    Family
    Transistors - Bipolar (BJT) - Single, Pre-Biased
    Series
    -
     
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    BCR116E6327HTSA1 Specifications

    Part Number BCR116E6327HTSA1
    Part Status Last Time Buy
    Transistor Type NPN - Pre-Biased
    Current - Collector (Ic) (Max) 100mA
    Voltage - Collector Emitter Breakdown (Max) 50V
    Resistor - Base (R1) 4.7 kOhms
    Resistor - Emitter Base (R2) 47 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
    Current - Collector Cutoff (Max) 100nA (ICBO)
    Frequency - Transition 150MHz
    Power - Max 200mW
    Mounting Type Surface Mount
    Package / Case TO-236-3, SC-59, SOT-23-3
    Supplier Device Package PG-SOT23-3
    PDF Part Photo Part Number Manufacturers Description
    Datasheet DTA143XKAT146 Rohm Semiconductor TRANS PREBIAS PNP 200MW SMT3
    Datasheet DTC123EKAT146 Rohm Semiconductor TRANS PREBIAS NPN 200MW SMT3
    Datasheet DTC114EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
    Datasheet DTC123JUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
    Datasheet DTC124EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
    Datasheet RN1306,LF Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
    Datasheet BCR183E6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 0.2W SOT23-3
    Datasheet BCR116E6327HTSA1 Infineon Technologies TRANS PREBIAS NPN 0.2W SOT23-3
    Datasheet RN2101,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
    Datasheet RN2101(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
    This page contains 3 electronic component agents, they are : Rohm Semiconductor Toshiba Semiconductor and Storage Infineon Technologies

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