Part Number | FDC3601N |
---|---|
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1A |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 153pF @ 50V |
Power - Max | 700mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | SuperSOT™-6 |
Part Photo | Part Number | Manufacturers | Description | |
---|---|---|---|---|
Datasheet | ZXMN6A25DN8TA | Diodes Incorporated | MOSFET 2N-CH 60V 3.8A 8-SOIC | |
Datasheet | FDS6911 | ON Semiconductor | MOSFET 2N-CH 20V 7.5A 8SOIC | |
Datasheet | FDMB2308PZ | ON Semiconductor | MOSFET 2P-CH MLP2X3 | |
Datasheet | CSD87352Q5D | Texas Instruments | MOSFET 2N-CH 30V 25A 8SON | |
Datasheet | IRF7324TRPBF | Infineon Technologies | MOSFET 2P-CH 20V 9A 8-SOIC | |
Datasheet | FDS3890 | ON Semiconductor | MOSFET 2N-CH 80V 4.7A 8-SO | |
Datasheet | SI7949DP-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 60V 3.2A PPAK SO-8 | |
Datasheet | SI7913DN-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 5A PPAK 1212-8 | |
Datasheet | SI4943CDY-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 8A 8-SOIC | |
Datasheet | STL65DN3LLH5 | STMicroelectronics | MOSFET 2N-CH 30V 65A POWERFLAT |