| Part Number | MUN5235T1G |
|---|---|
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 202mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SC-70-3 (SOT323) |
| Part Photo | Part Number | Manufacturers | Description | |
|---|---|---|---|---|
| Datasheet |  |
DTA143XKAT146 | Rohm Semiconductor | TRANS PREBIAS PNP 200MW SMT3 |
| Datasheet |  |
DTC123EKAT146 | Rohm Semiconductor | TRANS PREBIAS NPN 200MW SMT3 |
| Datasheet |  |
DTC114EUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F |
| Datasheet |  |
DTC123JUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F |
| Datasheet |  |
DTC124EUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F |
| Datasheet |  |
RN1306,LF | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W USM |
| Datasheet |  |
BCR183E6327HTSA1 | Infineon Technologies | TRANS PREBIAS PNP 0.2W SOT23-3 |
| Datasheet |  |
BCR116E6327HTSA1 | Infineon Technologies | TRANS PREBIAS NPN 0.2W SOT23-3 |
| Datasheet |  |
RN2101,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS PNP 0.1W SSM |
| Datasheet |  |
RN2101(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS PREBIAS PNP 0.1W SSM |
