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RJH65D27BDPQ-A0#T2 Details

RJH65D27BDPQ-A0#T2

Part Number: RJH65D27BDPQ-A0#T2

Manufacturer: Renesas Electronics America

Description: IGBT TRENCH 650V 100A TO247A

Category: Discrete Semiconductor Products

Family: Transistors - IGBTs - Single

Series: -

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RJH65D27BDPQ-A0#T2 Specifications

Part Number	RJH65D27BDPQ-A0#T2
Part Status	Active
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	100A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	1.65V @ 15V, 50A
Power - Max	375W
Switching Energy	1mJ (on), 1.5mJ (off)
Input Type	Standard
Gate Charge	175nC
Td (on/off) @ 25°C	20ns/165ns
Test Condition	400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr)	80ns
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247A

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