RN2101(T5L,F,T) Details

RN2101(T5L,F,T) Images

RN2101(T5L,F,T)

Part Number
RN2101(T5L,F,T)
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS PNP 0.1W SSM
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
Series
-
 
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RN2101(T5L,F,T) Specifications

Part Number RN2101(T5L,F,T)
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM
PDF Part Photo Part Number Manufacturers Description
Datasheet DTA143XKAT146 Rohm Semiconductor TRANS PREBIAS PNP 200MW SMT3
Datasheet DTC123EKAT146 Rohm Semiconductor TRANS PREBIAS NPN 200MW SMT3
Datasheet DTC114EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
Datasheet DTC123JUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
Datasheet DTC124EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
Datasheet RN1306,LF Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
Datasheet BCR183E6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 0.2W SOT23-3
Datasheet BCR116E6327HTSA1 Infineon Technologies TRANS PREBIAS NPN 0.2W SOT23-3
Datasheet RN2101,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
Datasheet RN2101(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
This page contains 3 electronic component agents, they are : Rohm Semiconductor Toshiba Semiconductor and Storage Infineon Technologies

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