Part Number | PBRN123ES,126 |
---|---|
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 700mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Part Photo | Part Number | Manufacturers | Description | |
---|---|---|---|---|
Datasheet | DTA143XKAT146 | Rohm Semiconductor | TRANS PREBIAS PNP 200MW SMT3 | |
Datasheet | DTC123EKAT146 | Rohm Semiconductor | TRANS PREBIAS NPN 200MW SMT3 | |
Datasheet | DTC114EUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F | |
Datasheet | DTC123JUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F | |
Datasheet | DTC124EUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F | |
Datasheet | RN1306,LF | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W USM | |
Datasheet | BCR183E6327HTSA1 | Infineon Technologies | TRANS PREBIAS PNP 0.2W SOT23-3 | |
Datasheet | BCR116E6327HTSA1 | Infineon Technologies | TRANS PREBIAS NPN 0.2W SOT23-3 | |
Datasheet | RN2101,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS PNP 0.1W SSM | |
Datasheet | RN2101(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS PREBIAS PNP 0.1W SSM |